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In bulk ${\mathrm{Sr}}_2{\mathrm{RuO}}_4$, the strong sensitivity of the superconducting transition temperature $T_{\text{c}}$to nonmagnetic impurities provides robust evidence for a superconducting order parameter that changes sign around the Fermi surface. In superconducting epitaxial thin-film ${\mathrm{Sr}}_2{\mathrm{RuO}}_4$, the relationship between $T_{\text{c}}$and the residual resistivity ${\rho }_0$, which in bulk samples is taken to be a proxy for the low-temperature elastic scattering rate, is far less clear. Using high-energy electron irradiation to controllably introduce point disorder into bulk single-crystal and thin-film ${\mathrm{Sr}}_2{\mathrm{RuO}}_4$, we show that $T_{\text{c}}$is suppressed in both systems at nearly identical rates. This suggests that part of ${\rho }_0$in films comes from defects that do not contribute to superconducting pairbreaking and establishes a quantitative link between the superconductivity of bulk and thin-film samples. Published by the American Physical Society2024 

Low resistance non-alloyed ohmic contacts are realized by a metal-first process on homoepitaxial, heavily n+ doped (010) β-Ga2O3. The resulting contacts have a contact resistance (Rc) as low as 0.23 Ω-mm on an as-grown sample and exhibit nearly linear ohmic behavior even without a post-metallization anneal. The metal-first process was applied to form non-alloyed contacts on n+ (010) β-Ga2O3 grown by metal-organic chemical vapor deposition (MOCVD) as well as suboxide molecular beam epitaxy. Identical contacts fabricated on similar MOCVD samples by conventional liftoff processing exhibit highly rectifying Schottky behavior. Re-processing using the metal-first process after removal of the poor contacts by conventional methods does not improve the contacts; however, addition of a Ga-flux polishing step followed by re-processing using a metal-first process again results in low resistance, nearly linear ohmic contacts. The liftoff process, therefore, does not reliably render nearly linear ohmic behavior in non-alloyed contacts. Furthermore, no interface contamination was detected by x-ray photoelectron spectroscopy. This suggests that during the initial liftoff processing, a detrimental layer may form at the interface, likely modification of the Ga2O3 surface, that is not removable during the contact removal process but that can be removed by Ga-flux polishing.